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Variable Capacitance Diodes
MA2SV04
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
* Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 - 0.02
0.8 0.1
+ 0.05
I Features
1.3 0.1 1.7 0.1
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 6 150 -55 to +150
Unit V C C
0.7 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: 5
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Series resistance* Symbol IR CD(1V) CD(3V) rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.0 5.8 Conditions Min Typ Max 10 11.1 6.4 0.35 Unit nA pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 - 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25C
0.27 - 0.02
+ 0.05
1
MA2SV04
IF V F
120 25C
100
Variable Capacitance Diodes
CD VR
f = 1 MHz Ta = 25C
100 VR = 5 V
IR Ta
100
50
Diode capacitance CD (pF)
Forward current IF (mA)
80
Ta = 60C
- 40C
30 20
60
10
Reverse current IR (nA)
0 4 8 12 16 20 24 28 32 36 40
10
1
40
5 3 2
0.1
20
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
CD Ta
1.04 f = 1 MHz VR = 1 V 3V
1.03
CD(Ta) CD(Ta = 25C)
1.02
1.01
1.00
0.99
0.98
0
20
40
60
80
100
Ambient temperature Ta (C)
2

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